The forward-current dependence of defect-related electroluminescence in Si structures produced by Er and O implantation into Si single crystals with subsequent annealing in a Cl-containing ambient at 1100C was studied. At 80K, an increase in the current was observed to cause the photon energies corresponding to the maxima of two defect-related electroluminescence peaks to increase from 0.807 and 0.87eV to 0.85 and 0.92eV, respectively. The increase in the current was also accompanied by an increase in the half-width and intensity of the electroluminescence peaks. To explain the observed effects, a model that was proposed earlier for the defect-related electroluminescence in plastically deformed Si was developed further; this model assumes the possible generation of inverse population involving four energy levels.

Effect of Current on the Electroluminescence of Defects Produced by High-Temperature Post-Implantation Annealing of Si:(Er,O) Structures in a Chlorine-Containing Environment. A.M.Emelyanov, E.I.Shek: Physics of the Solid State, 2004, 46[10], 1810-4