The density of crystal lattice defects in Si:Er layers grown through sublimation molecular-beam epitaxy at 520 to 580C was investigated by a metallographic method, and the Hall mobility of electrons in these layers was determined. It was found that the introduction of Er at a concentration of up to ~5 x 1018/cm3 into Si layers was not accompanied by an increase in the density of crystal lattice defects but leads to a considerable decrease in the electron mobility.

Crystal Lattice Defects and Hall Mobility of Electrons in Si:Er/Si Layers Grown by Sublimation Molecular-Beam Epitaxy. V.P.Kuznetsov, R.A.Rubtsova, V.N.Shabanov, A.P.Kasatkin, S.V.Sedova, G.A.Maksimov, Z.F.Krasilnik, E.V.Demidov: Physics of the Solid State, 2005, 47[1], 102-5