The effect of X-ray scattering by neutron-irradiated and reference (unirradiated) Si crystals grown by the Czochralski method and annealed at 850 to 1050C on the defect formation was comparatively investigated using triple-crystal X-ray diffractometry. The sizes and concentrations of clusters composed of point defects and dislocation loops formed during decomposition of an O-containing solid solution and subsequent clusterization of the point defects were calculated.

X-Ray Diffraction Study of the Effect of Neutron Irradiation on the Defect Formation in Silicon Crystals Grown by the Czochralski Method and Annealed at High Temperatures. V.A.Makara, N.N.Novikov, B.D.Patsaĭ: Physics of the Solid State, 2005, 47[10], 1863-8