The two-dimensional (2D) diffusion of self-interstitials (I) in crystalline Si, both at room temperature and at 800C, was studied by quantitative scanning capacitance microscopy measurements. The 2D I emission from an I source laterally confined down to sub-μm dimensions, obtained by low-energy implantation through a patterned oxide mask, was observed. At room temperature, I diffusion was monitored by measuring the electrical deactivation of B corresponding to the diffusing interstitial tail and it was demonstrated that this deactivation was due to compensating levels introduced by defects in the Si band gap. At 800C, I diffusion was monitored by measuring the transient enhanced diffusion of B spikes due to interstitial supersaturation produced during the annealing. In both cases, a dependence of the I depth-penetration on the original source size was shown.

Investigation of Two-Dimensional Diffusion of the Self-Interstitials in Crystalline Silicon at 800C and at Room Temperature. F.Giannazzo, S.Mirabella, F.Priolo, D.Goghero, V.Raineri: Journal of Vacuum Science & Technology B, 2004, 22[1], 369-72