Deep-level transient spectroscopy was used to study the filling behavior of a H-related metastable defect labeled EM1 (Ec-0.29eV) which was observed in O-rich n-type Si implanted with H ions at 88K and subsequently heated to room temperature. The EM1 deep level transient spectroscopy peak height decreased exponentially with filling pulse duration time in the range studied (1ms to 50s) and reaches saturation with a non-zero value. This result contradicted the filling behavior due to the carrier capture process at traps. The decreasing exponential dependence of the EM1 deep level transient spectroscopy peak height on filling time was reproduced when the measurement was restricted to up to 175K. This observation was ascribed to the transformation of EM1 occurring during deep level transient spectroscopy measurements, which was different from its metastable reaction reported previously. EM1, the stable state under reverse bias, was transformed into 2 stable states under zero bias with different activation energies.

Deep-Level Transient Spectroscopy Studies of Filling Behavior of a Hydrogen-Related Metastable Defect in n-Type Silicon. Y.Tokuda, W.Nakamura, K.Nakashima, H.Iwata: Japanese Journal of Applied Physics, 2005, 44[6A], 3789-92