Photoluminescence measurements of porous Si were carried out to investigate the inter-defects and to determine the activation energies in porous Si. The activation energies of the electrons confined in porous Si A peak and B peak, as obtained from the temperature-dependent photoluminescence spectra, were 67 and 61meV, respectively.

Defects in Porous Si Investigated by a Temperature Variation of Photoluminescence spectra. J.I.Yu, I.H.Bae: Physica E, 2005, 27[1-2], 121-3