Thermal annealing effects upon the photoluminescence of quantum wells, grown by means of chemical beam epitaxy using radical N, were described. The room-temperature photoluminescence peak intensity increased about 70 times, and the linewidth of the photoluminescence spectra, decreased during annealing (675C, 30s). A blue-shift of the photoluminescence peak wavelength, due to structural changes, was observed. The blue-shift was caused by In-Ga interdiffusion, rather than N-atom diffusion. Interdiffusion caused by defects was thought to reduce the number of non-radiative centres.

Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence T.Kageyama, T.Miyamoto, S.Makino, F.Koyama, K.Iga: Japanese Journal of Applied Physics - 2, 1999, 38[3B], L298-300