The perturbed γ–γ angular correlation method was used to study In-impurity pairs in Si, consisting of the probe atom (111In/111Cd) and several group-VI donors. Such pairs could be identified via the interaction between the quadrupole moments of the probe nucleus and the electric field gradient associated with the formed defect complex. A new quadrupole interaction frequency of 444MHz (η = 0) was measured at 293K in Te-implanted Si after annealing the sample above 700K. The complex was attributed to the In-Te pair along <100> crystal axis in Si. In addition, the temperature dependence of the quadrupole interaction frequency characterizing the pair was also studied. The implantation of S and Se could not lead to the formation of observable complexes despite the similar treatment of all samples.

The Study of the Interaction of Indium with Tellurium in Silicon. G.Tessema, R.Vianden: Applied Physics A, 2005, 81[7], 1471-6