The effect of surface capping on the super- and undersaturation of point defects in Si was investigated by the diffusion of deep (400nm) and shallow (200nm) high concentration profiles of B grown by molecular beam epitaxy. Additional information was extracted from the self-diffusion of Ge in the Si-like Si0.50Ge0.50-matrix. The objective was to investigate the injection of vacancies and interstitials from surface or bulk with the aim of obtaining inert diffusion conditions .

The Influence of Oxide/Nitride Surface Layers on Diffusion in Si and SiGe. N.R.Zangenberg, J.Chevallier, J.L.Hansen, A.Nylandsted Larsen: Applied Physics A, 2005, 81[5], 1077-82