The Si nanocrystals were formed by the implantation of Si+ into a SiO2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy was used to examine the microstructure of the Si nanocrystals produced by high-dose (3 x 1017/cm2) implantation. It was shown that there were stacking-fault defects only in some nanocrystals; while in others the stacking faults coexisted with twins. Two kinds of stacking-faults, one being an intrinsic stacking-fault and the other an extrinsic stacking-fault, were observed inside the Si nanocrystals. More intrinsic stacking-faults were found in the Si nanocrystals, and possible reasons were analyzed. These microstructural defects were expected to play an important role in light emission from the Si nanocrystals.

Stacking Faults in Si Nanocrystals. Y.Q.Wang, R.Smirani, G.G.Ross: Applied Physics Letters, 2005, 86[22], 221920 (3pp)