Electronic structures of the Si stacking-fault tetrahedron were studied, by using the first-principles calculations. It was shown that the electron and hole states of bulk Si were localized around the stacking-fault tetrahedron faces, the stacking-fault tetrahedron ridges, and the stacking-fault tetrahedron apices. This feature occurred due to the unique atomic geometries in these structures, such as stacking-fault layers, dimer bonds, and the Si-dome structures.

Electronic Structures of Natural Quantum-Dot System; Si Stacking-Fault Tetrahedron. T.Nakayama, R.Kobayashi: Physica Status Solidi C, 2005, 2[8], 3125-8