Electron paramagnetic resonance was conducted on Al2O3 films deposited by atomic layer deposition on (100)Si. Multiplet spectra were observed, which could be consistently decomposed assuming the presence of only Pb0 and Pb1 centers, which were well known in Si/SiO2 structures. The Al2O3 films deposited onto HF-treated (100)Si exhibited unpassivated Pb0 and Pb1 centers, with concentrations of 7.7 x 1011 and 8 x 1010/cm2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduced the unpassivated Pb0 concentration to 4.5 x 1011/cm2. Forming-gas annealing at 400 to 550C caused no further reduction in defect density. This was thought to be related to a spread in passivation activation energy; associated with low-temperature deposition.

Electron Paramagnetic Resonance Evaluation of Defects at the (100)Si/Al2O3 Interface. B.J.Jones, R.C.Barklie: Journal of Physics D, 2005, 38[8], 1178-81