The properties of Si-doped Ga0.52In0.48P layers which had been grown by means of solid-source molecular beam epitaxy were studied by using deep level transient spectroscopy, temperature-dependent electron concentration and capacitance versus temperature measurements. The persistent photoconductivity effect was observed in highly Si-doped samples. The same samples exhibited a linear relationship between the trap concentration and the electron concentration. It was suggested that these donor-related levels could be attributed to the presence of DX centres. This defect exhibited ionization energies of some 0.358 to 0.435eV, but was located at only 0.011 to 0.013eV below the conduction band. The energy level, capture barrier and ionization energy were typical of those of a donor-related DX center. The Poole-Frenkel effect upon the emission rate strongly indicated that the defect was shallow.

Characterization of Si-Doped GaInP Grown by Solid Source Molecular Beam Epitaxy using Deep Level Transient Spectroscopy S.F.Yoon, P.Y.Lui, H.Q.Zheng: Journal of Crystal Growth, 2000, 209[4], 653-60