The results of an investigation of the point defects generation, redistribution and interaction with extended defects and impurities in the Si–SiO2 system during the process of its formation by means of electron paramagnetic resonance, infra-red absorption spectroscopy, metallography, transmission electron microscopy and surface photo-voltage spectra were presented. The influence of the oxidation conditions (oxidation time, cooling rate, ambient) on the defect structure of the Si–SiO2 interface was studied. It was established that the vacancies type defects electron paramagnetic resonance signal intensity dependence on the oxidation time (oxide thickness) revealed one or two maximum depending on the cooling rate. In the samples with the oxide thickness in the range of the I(d) maximum an interaction between point defects and extended defects occurred. It was shown that the interaction between point defects and extended defects in the Si–SiO2 system affected the structural and electrical properties of the interface.

Interaction between Point Defects, Extended Defects and Impurities in the Si–SiO2 System during the Process of its Formation. D.Kropman, T.Kärner, U.Abru, Ü.Ugaste, E.Mellikov: Thin Solid Films, 2004, 459[1-2], 53-7