The results of an investigation of the point defect generation, redistribution and interaction with extended defects and impurities in the Si–SiO2 system during the process of its formation by means of electron paramagnetic resonance, MOS structure voltage–capacitance technique, metallography, transmission electron microscopy and surface photo-voltage spectra were presented. The influence of the oxidation conditions (oxidation time, cooling rate and ambient) on the defect structure of the Si/SiO2 interface and its electrical parameters was studied. It was established that the dependence of vacancy type defects electron paramagnetic resonance signal intensity, I, on the oxide thickness, d, was non-monotonic. In the samples with the oxide thickness in the range of the I(d) maximum, an interaction between point defects and extended defects occurred. It was shown that the interaction between point defects and extended defects in the Si–SiO2 system depended upon the oxidation ambient and affected the structural and electrical properties of the interface.

Interaction between Point Defects, Extended Defects and Impurities in the Si–SiO2 System during the Process of its Formation. D.Kropman, T.Kärner, U.Abru, Ü.Ugaste, E.Mellikov, M.Kauk: Materials Science and Engineering B, 2004, 114-115, 295-8