Transmission electron microscopic and transmission electron diffraction techniques were used to investigate the effects of Te doping upon ordering and antiphase boundaries in organometallic vapour phase epitaxial Ga0.5In0.5P layers which had been grown onto (001) GaAs, singular and vicinal, substrates at 670C. The transmission electron microscopic results showed that the behaviour of antiphase boundaries, in the case of singular samples, differed from that of the vicinal samples. The density of antiphase boundaries, in the case of vicinal samples, was increased by a factor of about 2, while that of singular samples was slightly increased as the Te concentration was increased. The antiphase boundaries were inclined by 10 to 57º from the (001) growth surface. In the case of the singular samples, the angle seemed to remain essentially unchanged with increasing doping level. However, in vicinal samples, the angle decreased appreciably with increasing concentration.

Effects of Te Doping on Ordering and Antiphase Boundaries in GaInP C.J.Choi, R.Spirydon, T.Y.Seong, S.H.Lee, G.B.Stringfellow: Japanese Journal of Applied Physics - 1, 2000, 39[2A], 402-6