Well-controlled populations of dislocations were introduced into 4H-SiC by bending in the cantilever mode and annealing at 400 to 700C. The introduced-defects consisted of double stacking faults bounded by 30° Si(g) partial dislocations. Their expansion was asymmetrical, with a velocity that was directly measured on the surface of KOH-etched samples after deformation. The values of the activation energy and stress exponent were obtained, and the formation of double stacking faults was analyzed.

Study of Shockley Partial Dislocation Mobility in Highly N-Doped 4H-SiC by Cantilever Bending. H.Idrissi, G.Regula, M.Lancin, J.Douin, B.Pichaud: Physica Status Solidi C, 2005, 2[6], 1998-2003