Si-implanted, unstrained Si1–xGex layers of various Ge concentrations ranging from 0 to 50% were grown by molecular beam epitaxy on top of a Si substrate. The samples were subjected to a 750C anneal for 3h to explore the subsequent defect structure. Plan-view transmission electron microscopy was implemented to investigate the evolution of defects. The Si1–xGex samples with up to 5%Ge exhibited {311} defect formation and dissolution, and these defects ripen throughout the course of the anneal. Increasing the Ge content had an adverse effect on the growth of {311} defects. The samples with Ge contents greater than 24% demonstrated only dislocation loop formation. Dislocation loop formation and the observed impedance of {311} defect growth was facilitated by increasing the Ge content due to the weak bonding associated with the Ge atoms.

{311} Defect Evolution in Ion-Implanted Relaxed Si1–xGex. R.Crosby, K.S.Jones, M.E.Law, A.Nylandsted Larsen, J.Lundsgaard Hansen: Journal of Vacuum Science & Technology B, 2004, 22[1], 468-70