Transmission ion channeling techniques and an accelerator were used to map misfit dislocations at the interface of a SiGe layer epitaxially grown onto a (001) Si substrate. A bunch of five 60° dislocations and a single dislocation were studied by using a focussed 2MeV proton beam with a spatial resolution of 60nm. The bent (110) planes, due to 60° dislocations, caused the image contrast to change asymmetrically while tilting the sample close to the channeling direction.

Characterisation of 60° Misfit Dislocations in SiGe Alloy Using Nuclear Microscopy. L.Huang, M.B.H.Breese, E.J.Teo: Nuclear Instruments and Methods in Physics Research Section B, 2005, 231[1-4], 452-6