Visible and ultra-violet micro-Raman scattering was used to monitor the high-pressure high-temperature annealing of Mg/P-implanted films. Temperatures of up to 1500C, with N over-pressures of 1 to 1.5Gpa, were used during annealing. The crystalline quality, strain, and free carrier concentrations in ion-implanted films were averaged over the layer thickness, and in a 40nm-thin surface layer of the sample. Annealing temperatures of 1400 to 1500C were found to result in the almost full recovery of the crystalline quality of ion-implanted material. No significant surface degradation occurred during annealing. High N over-pressures proved to be very effective in preventing N out-diffusion from the surface at high temperatures.

High-Pressure High-Temperature Annealing of Ion-Implanted GaN Films Monitored by Visible and Ultraviolet Micro-Raman Scattering M.Kuball, J.M.Hayes, T.Suski, J.Jun, M.Leszczynski, J.Domagala, H.H.Tan, J.S.Williams, C.Jagadish: Journal of Applied Physics, 2000, 87[6], 2736-41