Pressure (100–200MPa) and temperature (900–1100C) effects on the equilibria of native point defects and background impurities in Zn-enriched ZnS were studied using cathodoluminescence and transmission spectra. The optimal conditions were found under which high pressures and temperatures accelerated the migration of defects and impurities. The associated structural and compositional changes were studied by scanning electron microscopy. The increase in the concentration of dissolved O at high pressures and temperatures was accompanied by a reduction in the band-gap of ZnS, growth and blue-shift (to 395–400 nm) of the shorter wavelength component of the SA blue emission in ZnS and quenching of the longer wavelength component (445nm). In addition, at 300K a free-exciton band emerged at 342nm. It was shown that published data available could be used to evaluate the concentration of dissolved O in ZnS · O from its band-gap. The effects of different O species on the transmission of ZnS were studied in the range of 3.5 to 15μm.

Pressure and Temperature Effects on Point-Defect Equilibria and Band Gap of ZnS. N.K.Morozova, I.A.Karetnikov, K.V.Golub, E.M.Gavrishchuk, E.V.Yashina, V.G.Plotnichenko, V.G.Galstyan: Inorganic Materials, 2004, 40[11], 1138-45