It was shown that current Arrhenius analyses of the main electron irradiation-induced defect trap in n-type material, as observed using deep-level transient spectroscopy, was insufficiently accurate. An exact fitting of the deep-level transient spectrum for this trap revealed 2 components, each of which had a thermal energy near to 0.06eV; not the apparent 0.14 to 0.20eV which was indicated by other deep-level transient spectroscopic studies. This result resolved a discrepancy between Hall-effect and deep-level transient spectroscopic determinations of the thermal energy of this defect center.

On the Main Irradiation-Induced Defect in GaN L.Polenta, Z.Q.Fang, D.C.Look: Applied Physics Letters, 2000, 76[15], 2086-8