It had recently been shown that the interface between layers of a heterostructure makes it possible to increase the sharpness of the p-n junction and the homogeneity of an impurity distribution in doped areas, and also to control the depth of the junction. The dynamics of the dopant concentration in an inhomogeneous semiconductor structure were analyzed here while taking account of the temporal and concentrational dependences of the diffusion coefficient. Optimization of the parameters and the annealing time for production of the p-n junction with a smaller parasitic capacitance was performed. It was shown that doubling the annealing time, as compared with its optimum value led to a variation of the sharpness of the p-n junction from 10 to 200%.

Influence of the Spatial, Temporal and Concentrational Dependence of the Diffusion Coefficient on Dopant Dynamics - Optimization of Annealing Time. E.L.Pankratov: Physical Review B, 2005, 72[7], 075201 (8pp)