Point defects were created in epitaxial specimens, by 1 to 2MeV electron irradiation at 300K, and were studied by using temperature-dependent Hall-effect, photoluminescence, and deep level transient spectroscopic methods. The N vacancy was identified as being a relatively shallow donor. The material was quite resistant to displacement damage.

Point Defect Characterization of GaN and ZnO D.C.Look, D.C.Reynolds, Z.Q.Fang, J.W.Hemsky, J.R.Sizelove, R.L.Jones: Materials Science and Engineering B, 1999, 66[1-3], 30-2