The fabrication of p+/n junctions using Ge+, C+ and B+ co-implantation and spike annealing was considered. The junction location was defined by where the B concentration dropped to 1018/cm3. These junctions were achieved by careful engineering of the amorphization, stresses and point defects. An advanced simulation of B diffusion was used to understand and optimize the process. The simulations showed that the optimum process completely suppressed transient enhanced diffusion of B, and the formation of B-interstitial clusters. This increased the B solubility to 20% above the equilibrium solid-state solubility.

Optimizing Boron Junctions through Point Defect and Stress Engineering using Carbon and Germanium Co-Implants. V.Moroz, Y.S.Oh, D.Pramanik, H.Graoui, M.A.Foad: Applied Physics Letters, 2005, 87[5], 051908 (3pp)