Full 1-dimensional modelling was reported of the current through a long PIN semiconductor diode with different concentrations of shallow donors and acceptors, deep donors and acceptors, and generation–recombination centers. From these results, a physical understanding of the processes involved was obtained. The effect on the observed properties for short diodes was also described. An approximate analytical approach was given for a diode with a high defect concentration to complement the standard equations for a diode with a low defect concentration. The results should aid the understanding of the properties of experimental diodes, gave an indication of the types of traps in the material and also suggested how their properties may be modified by additional doping. There were specific applications of these results to radiation damaged devices, lifetime killed diodes and devices made from high resistance and semi-insulating materials.

Modelling of Semiconductor Diodes Made of High Defect Concentration Irradiated High-Resistivity and Semi-Insulating Material - the Current–Voltage Characteristics. L.Dehimi, N.Sengouga, B.K.Jones: Nuclear Instruments and Methods in Physics Research Section A, 2004, 519[3], 532-44