It was demonstrated that the formation of sub-10nm junctions could be achieved by point-defect engineering. The approach was based upon the fact that high-energy ion bombardment with Si could spatially separate the distributions of interstitials and vacancies; with a vacancy-rich region being formed near to the surface region. The effects of point-defect engineering upon boride-enhanced diffusion were systematically investigated by using B superlattices grown by molecular-beam epitaxy. It was observed that a high-energy implant provided an effective method for suppressing boride-enhanced diffusion. Point-defect engineering could also increase the stability of highly-doped junctions, retard B diffusion to a rate much lower than normal diffusion, sharpen the dopant profile and enhance B activation.

Ultrashallow Junction Formation by Point Defect Engineering. L.Shao, P.E.Thompson, P.A.W.van der Heide, S.Patel, Q.Y.Chen, X.Wang, H.Chen, J.Liu, W.K.Chu: Journal of Vacuum Science & Technology B, 2004, 22[1], 302-5