The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals was considered. The work focussed on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest was the scaling of relationships between cell-size, dislocation density and acting shear stress. Among the materials there were characteristic similarities but also significant variations of the cell genesis. Possible measures for the retardation of cell patterning during growth were demonstrated.

Dislocation Cell Structures in Melt-Grown Semiconductor Compound Crystals. P.Rudolph: Crystal Research and Technology, 2005, 40[1-2], 7-20