The computer simulation of EBIC contrast of uncharged dislocation as a function of excitation level was carried out. It was shown, that if a real distribution of excess carriers was taken into account under calculations a smooth decay of dislocation contrast close to logarithmic one could be obtained even for uncharged dislocations.

Simulation of Uncharged Dislocation EBIC Contrast at High Excitation Level. N.N.Negulyaev, E.B.Yakimov, S.I.Zaitsev: Physica Status Solidi C, 2005, 2[6], 1822-6