It was recalled that, due to the lack of commercially available large size native substrates, the reduction of threading dislocations remained one of the main challenges of group III-nitride based technology. A review was presented here of the main methods aimed at producing high-quality hetero-epitaxial nitride films with reduced densities of dislocations. Methods such as the incorporation of buffer layers, substrate nitridation, interlayer insertion, silane-ammonia treatment, lateral overgrowth and growth of thick nitride layers were reviewed. The advantages and drawbacks of these methods were compared.

Classic and Novel Methods of Dislocation Reduction in Heteroepitaxial Nitride Layers. J.Jasinski: Physica Status Solidi C, 2005, 2[3], 994-1005