Deep-level transient spectroscopy was used to study the properties of the 5.4MeV He-ion bombardment-induced electron traps, ER3 to ER5, in epitaxially grown material. These defects were positioned at Ec-0.20eV, Ec-0.78eV and Ec-0.95eV, respectively. Previous studies had shown that electron emission from ER3 exhibited an electric field enhancement which was not characteristic of a Poole-Frenkel effect. On the basis of this, and the true capture cross-section of ER3, it was suggested that ER3 was an acceptor-like defect.

Emission Kinetics of Electron Traps Introduced into n-GaN during He-Ion Irradiation. F.D.Auret, S.A.Goodman, M.J.Legodi, W.E.Meyer: Nuclear Instruments and Methods in Physics Research B, 1999, 148[1-4], 474-7