A theoretical model was suggested which described the generation of prismatic misfit dislocation loops surrounding cylindrical quantum dots. These dislocation loops partly accommodate misfit stresses in cylindrical quantum dots embedded in a film deposited onto a substrate. In the framework of the model, the ranges of geometric parameters (misfit parameter f, quantum dot radius a and its height H) were calculated at which the generation of misfit dislocation loops surrounding cylindrical quantum dots was energetically favorable. The exemplary cases of dislocation loop generation in the InxGa1-xN/GaN and GaN/AlN systems were briefly considered.

Misfit Dislocation Loops in Cylindrical Quantum Dots. I.A.Ovidko, A.G.Sheinerman: Journal of Physics - Condensed Matter, 2004, 16[41], 7225-32