The annealing behavior and lattice-site location of Er, and Er plus O, which had been implanted (only the Er was localized) into monocrystalline epilayers were studied by means of Rutherford back-scattering spectroscopy/channelling and photoluminescence techniques. After implantation to a dose of 6 x 1014/cm2, the Er ions occupied substitutional sites; as revealed by detailed angular scans along the <10•1> and <00•1> axes. Increasing the dose to 6 x 1015/cm2 produced a continuous amorphous layer. The damage which was produced by the implantation began to anneal out at 600C. In samples which had been implanted to lower doses, recovery was significant after annealing at 900C for 120s. During annealing, the Er remained in substitutional sites. The presence of O seemed to increase the substitutional fraction slightly after annealing at 900C. The photoluminescence was more intense for samples which were co-doped with O.

Ion Beam and Photoluminescence Studies of Er and O Implanted GaN. E.Alves, M.F.Da Silva, J.C.Soares, R.Vianden, J.Bartels, A.Kozanecki: Nuclear Instruments and Methods in Physics Research B, 1999, 147[1-4], 383-7