The correlation between dislocation density, electrical properties and optical properties of lightly Si-doped films, grown by means of metalorganic vapour phase epitaxy, was investigated. Photo-electro-chemical etching was used to determine the dislocation density. The latter technique was modified by introducing an additional pulsed sequence. A clear correlation was found between the dislocation density, Hall mobility and room-temperature photoluminescence intensity.

Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy A.Watanabe, H.Takahashi, T.Tanaka, H.Ota, K.Chikuma, H.Amano, T.Kashima, R.Nakamura, I.Akasaki: Japanese Journal of Applied Physics - 2, 1999, 38[10B], L1159-62