Films of Mg-doped material were grown by metalorganic chemical vapor deposition and treated with a N plasma after conventional rapid thermal annealing. The conductivity of the p-type film was greatly enhanced by N plasma treatment. A new photoluminescence band peaked at 3.27eV, and a band at 2.95eV was markedly attenuated in the case of plasma-treated samples. Photoluminescence measurements suggested that self-compensation in Mg-doped material, caused by N vacancies, was effectively reduced by the N-plasma treatment; leading to enhanced p-type conductivity.

Reactivation of Mg Acceptor in Mg-Doped GaN by Nitrogen Plasma Treatment S.W.Kim, J.M.Lee, C.Huh, N.M.Park, H.S.Kim, I.H.Lee, S.J.Park: Applied Physics Letters, 2000, 76[21], 3079-81