The diffusion of 59Fe in the amorphous metal was studied at 533 to 643K. Depth profiling of the as-implanted or diffusion broadened profiles was carried out by using serial sectioning ion beam sputtering techniques. It was found that the diffusivities between the above temperatures ranged from 3.6 x 10-24 to 1.2 x 10-20m2/s. Special attention was paid to the effect of pre-annealing (table 151). In as-quenched specimens, the diffusivity increased markedly with increasing diffusion time, to an almost constant value. The temperature dependence could be described by:

D (m2/s) = 2.7 x 10-2 exp[-2.4(eV)/kT]

J.Horvath, H.Mehrer: Crystal Lattice Defects and Amorphous Materials, 1986, 13[1], 1-14

Table 152

Diffusivity of 32P in Fe40Ni40B20

Table 153

Diffusion of Si in Fe40Ni40B20