The diffusion of 32P which had been implanted into the amorphous metal was studied at 573 to 644K. Depth profiling of the as-implanted or diffusion-broadened profiles was carried out by using serial sectioning and ion beam sputtering techniques. It was found that the diffusivities at the above temperatures ranged from 9.0 x 10-24 to 2.3 x 10-20m2/s (table 152). The temperature dependence could be described by:

D (m2/s) = 1.0 x 10-4 exp[-3.1(eV)/kT]

J.Horvath, K.Freitag, H.Mehrer: Crystal Lattice Defects and Amorphous Materials, 1986, 13[1], 15-23

Table 154

Diffusivity of Ti in Fe40Ni40B20