The formation and annealing of radiation-induced defects in doped and nominally undoped n-type material was investigated by means of electrical measurements and Raman spectroscopy. The production rate of defects depended upon the dopant concentration. This suggested that at least one type of native defect was involved in impurity-defect interactions at room temperature. Two prominent stages of defect annealing were revealed. Annealing at above 100C was associated with mobile native defects. A considerable fraction of the radiation defects remained after annealing at above 750C.

Behavior of Electrically Active Point Defects in Irradiated MOCVD n-GaN V.V.Emtsev, V.Y.Davydov, V.V.Kozlovskii, D.S.Poloskin, A.N.Smirnov, N.M.Shmidt, A.S.Usikov: Physica B, 1999, 273-274, 101-4