The defect creation mechanism of diamond by H plasma treatment at room temperature was investigated. Electron spin resonance observations revealed that H-plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in Si. The difference in the defect creation mechanism between diamond and Si was explained in terms of the existence of sp2 hybridization in the diamond network.

Defect Creation in Diamond by Hydrogen Plasma Treatment at Room Temperature. Y.Yamazaki, K.Ishikawa, S.Samukawa, S.Yamasaki: Physica B, 2006, 376-377, 327-30