On the basis of positron annihilation experiments it was proposed that, in 3C-SiC, isolated Si vacancies were responsible for positron trapping after electron irradiation. It was also proposed that, in hexagonal SiC, one type of vacancy defect survived after annealing at 1000C: C–vacancy–C–antisite complexes or Si–vacancy–N pairs. Meanwhile, C vacancies, Si vacancies and divacancies were excluded.

Positron Study of Electron Irradiation-Induced Vacancy Defects in SiC. A.Kawasuso, M.Yoshikawa, H.Itoh, R.Krause-Rehberg, F.Redmann, T.Higuchi, K.Betsuyaku: Physica B, 2006, 376-377, 350-3