A KOH-based defect etching procedure for silicon carbide was developed which involved in situ temperature measurements and control of the melt composition. Hence, for the first time, reproducible etching conditions (etching rate versus temperature and time) were established. The etching procedure was time-independent. That is, no alteration in KOH melt composition took place and absolute melt temperatures could be set. The advanced KOH etching furnace, including the development of a new temperature sensor resistant to molten KOH, was described. Up-dated absolute KOH etching parameters for n-type SiC and new absolute KOH etching parameters for low- and highly p-type doped SiC were presented. These were used for quantitative defect analysis. The best defect etching recipes were 530C/300s (activation energy: 16.4kcal/mol) and 500C/300s (activation energy: 13.5kcal/mol) for n-type and p-type SiC, respectively. Optimization of KOH Etching Parameters for Quantitative Defect Recognition in n- and p-Type Doped SiC. S.A.Sakwe, R.Müller, P.J.Wellmann: Journal of Crystal Growth, 2006, 289[2], 520-6