The microstructures of gas-source molecular beam epitaxial films on (00•1) sapphire were studied by means of transmission electron microscopy. In the case of nucleation layers which were deposited at 500C, high-quality material with only dislocations (5 x 109/cm2) in the film bulk, were obtained. In the case of nucleation layers which were deposited at 550C, the resultant material was poor; with inversion domains and {11•0} prismatic defects.

Effect of the Nucleation Layer Deposition Temperature on the Nature of Defects in GSMBE GaN Films P.Vennéguès, N.Grandjean, J.Massies, F.Semond: Journal of Crystal Growth, 1999, 201-202, 423-8