A systematic study was made of the evolution and distribution of dislocations in PVT 6H-SiC single crystals grown under various conditions. Using KOH defect etching and optical microscopy, dislocation tracking along the crystal length was performed in order to study their evolution and propagation mechanisms on the basis of statistics. In particular, crystal growth experiments, performed using a continually increased temperature during the processing time, were used to investigate the role of temperature in dislocation formation and annihilation. Dislocation evolution in this particular PVT growth process was compared with the results of using a constant processing temperature.

Dislocation Evolution and Distribution During Physical Vapor Transport (PVT) Growth of Bulk 6H-SiC Single Crystals. S.A.Sakwe, R.Müller, P.Masri, P.J.Wellmann: Physica Status Solidi C, 2006, 3[3], 562-6