It was recalled that extended defects in semiconductors could trap charge and lead to changes in carrier concentration and mobility. The trapping effects of pores, micro-cracks, and dislocations in SiC were considered here, as analyzed by using deep-level transient spectroscopy, transmission electron microscopy and scanning surface potential microscopy. The defect structures were modeled as spheres, plates, and cylinders for pores, cracks, and dislocations, respectively, and their potentials were directly compared with those measured by holographic transmission electron microscopy. The dynamics of the capture and emission processes were investigated by using deep level transient spectroscopy, although the standard deep level transient spectroscopy analysis framework was not applicable and had to be replaced by a more general formalism. As an example, 40nm-diameter nanopores in SiC could each hold more than 100 electrons, and exhibited anomalous capture and emission properties.

Giant Traps Associated with Extended Defects in GaN and SiC. D.C.Look, Z.Q.Fang, A.Krtschil, A.Krost: Physica Status Solidi C, 2005, 2[3], 1039-46