Wafer samples were characterized by using photoluminescence spectroscopy and mapping. Characteristic photoluminescence mapping patterns corresponded to etch-pit patterns originating from dislocations and micropipes. The intensities of the 1.3eV band

related to Si vacancies, the 0.9eV band related to V and the 1.1eV band related to undefined UD-1 centers were decreased, increased and increased around dislocations, respectively. It was believed that the variation in intensity contrast around dislocations could be attributed to differences in the diffusivity between point defects and impurities, and in their interaction with dislocations.

Defect Observation in SiC Wafers by Room-Temperature Photoluminescence Mapping. E.Higashi, M.Tajima, N.Hoshino, T.Hayashi, H.Kinoshita, H.Shiomi, S.Matsumoto: Materials Science in Semiconductor Processing, 2006, 9[1-3], 53-7