The structural defects near the film/substrate interface of a homo-epitaxially grown film by the vapor–liquid–solid method and heavily doped 4H–SiC film were studied by transmission electron microscopy. The structural defects which were observed consisted of low density threading edge dislocations, high density basal plane screw semi-loops due to misorientation by low-angle twisting around the c axis as well as rare stacking faults after the dissociation of basal plane perfect dislocations into partial ones. These defects, localized within a thin layer close to the film/substrate interface, accommodate the two lattices, leaving the rest of the overgrown film free of defects.

Structural Defects Near the Film/Substrate Interface of a Homo-Epitaxial 4H–SiC Film Grown by the Vapour–Liquid–Solid Mechanism. E.K.Polychroniadis: Semiconductor Science and Technology, 2005, 20[6], 645-51