It was recalled that the movement of basal-plane dislocations in SiC enhanced the formation of deleterious stacking faults. Here, for the first time, the evolution and stability of basal-plane dislocations in highly p-type doped SiC – as compared with conventional highly n-type doped SiC – was reported. By using sequentially doped p-type/n-type/p-type SiC single crystals (the sequential doping was performed in single growth runs) the occurrence of basal-plane dislocations in n-type doped SiC versus p-type doped SiC was investigated with regard to their evolution and stability as a function of dopant type. It was found that basal-plane dislocations were absent, or significantly less pronounced, in p-type doped SiC as compared with n-type doped SiC. This was of great importance with regard to the stacking fault problem in SiC.

Evolution and Stability of Basal Plane Dislocations During Bulk Growth of Highly n-Type Doped versus Highly p-Type Doped 6H-SiC. S.A.Sakwe, R.Müller, D.Queren, U.Künecke, P.J.Wellmann: Physica Status Solidi C, 2006, 3[3], 567-70