A model for the transformation of SiC polytypes occurring during the growth of an epitaxial layer was suggested that was based on the variation over time of the concentration of C vacancies in a transition layer. Experimental data were analyzed in terms of this model. It was shown that the parameter, Gτ/LT (where LT was the thickness of the transition layer, G was the film growth rate, and τ was the lifetime of a vacancy in the transition layer) was invariant with respect to the method and temperature of the growth of the epitaxial layer. This parameter was determined only by the concentration of C vacancies in the substrate and in the film.

A Vacancy Model of the Heteropolytype Epitaxy of SiC. A.A.Lebedev, S.Y.Davydov: Semiconductors, 2005, 39[3], 277-80