The propagation of stacking faults in SiC PiN diodes under forward bias was studied by the electron beam induced current mode of scanning electron microscopy. The primary stacking fault nucleation sites were confirmed to be pre-existing basal plane dislocations. Damage to the diode surface could also cause stacking fault propagation in the device. Hence, in addition to the elimination of basal plane dislocations in the active layer of the diode, avoidance of surface damage by paying careful attention to device processing and testing was also important for fabricating stable SiC PiN diodes

Propagation of Stacking Faults from Surface Damage in SiC PiN Diodes. Z.Zhang, S.I.Maximenko, A.Shrivastava, P.Sadagopan, Y.Gao, T.S.Sudarshan: Applied Physics Letters , 2006, 88[6], 062101 (3pp)