Defects in highly N-doped 4H-SiC deformed by cantilever bending at 550C were identified by using weak-beam and high-resolution transmission electron microscopy. The induced defects consisted of double stacking-faults whose expansion produced a local 4H → 3C phase transformation. Each double stacking fault was bounded by 2 identical 30° Si(g) partial dislocations which glided on 2 adjacent basal planes. The double stacking faults belonged to 3 different populations which differed with regard to their extension as a function of the applied stress and the 30° Si(g) characteristics (line direction, Burgers vector, glide plane and glide direction). External mechanical stresses were the main driving forces involved in double stacking fault expansion. Extra driving forces, such as thermodynamic or electronic ones, were also likely to be involved.

Structural Characterization of Double Stacking Faults Induced by Cantilever Bending in Nitrogen-Doped 4H-SiC. G.Regula, M.Lancin, H.Idrissi, B.Pichaud, J.Douin: Philosophical Magazine Letters, 2005, 85[5], 259-67